Christopher Grinde
2005-03-09 15:09:53 UTC
Hello.
I am a Ph.D student at Vestfold University College/University of Oslo, in
Norway.
As part of my Ph.D work, I plan to make some MEMS devices.
We have equipment to do most of the processing ourselves, but lack the
possibility to do n-type implantation.
As I have quite limited funding, I am looking for the cheapest solution
available.
I need to implant 4'' SOI wafers as follows(I'll activate/diffuse myself)
-Deep n-type
-Shallow n-type(~0.2-0.3 mu after activation)
The deep implantation is to be used to form ohmic contact to the shallow
implantation in order to control potentials during electrochemical etching.
Please advice
I am a Ph.D student at Vestfold University College/University of Oslo, in
Norway.
As part of my Ph.D work, I plan to make some MEMS devices.
We have equipment to do most of the processing ourselves, but lack the
possibility to do n-type implantation.
As I have quite limited funding, I am looking for the cheapest solution
available.
I need to implant 4'' SOI wafers as follows(I'll activate/diffuse myself)
-Deep n-type
-Shallow n-type(~0.2-0.3 mu after activation)
The deep implantation is to be used to form ohmic contact to the shallow
implantation in order to control potentials during electrochemical etching.
Please advice
--
Christopher Grinde
IMST Vestfold University College
Christopher Grinde
IMST Vestfold University College